The impact of characterization techniques on HgCdTe infrared detector technology

Abstract

The authors review those characterization techniques that have played significant roles in the development of HgCdTe infrared detector technology. They focus on the two specific HgCdTe devices that have achieved widespread application for infrared detection in the LWIR (8-12 mu m) and VLWIR (12-20 mu m) spectral regions: the simple n-type photoconductor and the P-on-n LPE heterojunction photodiode. They review the device physics of these two detectors, relate device performance to starting material properties and processing parameters, and describe the most important characterization techniques that have had a role in their development.