Enhanced radiation hardness of ZnO nanorods versus bulk layers

A. Burlacu, V. V. Ursaki, Daniel Lincot, Thierry Pauporté, E. Rusu, I. M. Tiginyanu

physica status solidi (RRL) - Rapid Research Letters · 2008 · 23 citations · 7 references

DOIFull text

Open access

Concepts

Abstract

Abstract It is shown that ZnO nanorods grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe +23 irradiation at a dose of 1.5 × 10 14 cm –2 in ZnO nanorods is nearly identical to that induced by a dose of 6 × 10 12 cm –2 in bulk layers. The change in the nature of electronic transitions responsible for luminescence occurs at an irradiation dose around 1 × 10 14 cm –2 and 5 × 10 12 cm –2 in nanorods and bulk layers, respectively. High energy heavy ion irradiation followed by thermal annealing is also effective on the quality of ZnO nanorods grown by electrodeposition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

References

7