Spatial and Spatio‐Temporal Patterns in pnpn Semiconductor Devices

Abstract

Abstract Spatial and spatio‐temporal patterns of the current density and the potential distribution in silicon pnpn devices are expermentally investigated. In dependence on various parameters we observe homogeneous current distributions and the spontaneous appearance of stationary standing, rocking, and travelling well‐localized current density filaments. Model calculations reproduce the main features of the experiments.