IEEE Transactions on Electron Devices · 2009 · 18 citations · 10 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSensorsAnalog Integrated CircuitsCmos Circuit DesignDigital Image ProcessingImage ProcessingImage SensorsMixed-signal Integrated Circuit DesignCmos Image SensorsCmos Logic CircuitsDynamic RangeImage Sensor TechnologyLow-voltage Cmos DesignReadoutReadout Integrated CircuitsSensor Readout Circuits
This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- ¿m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.
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