Applied Physics Letters · 1993 · 110 citations · 12 references
EngineeringNanoporous MaterialElectrode-electrolyte InterfacePs LayersSilicon On InsulatorLuminescence PropertyElectrochemical TechniqueConducting PolymerChemical EngineeringVisible ElectroluminescenceEl IntensityCompound SemiconductorMaterials ScienceElectroactive MaterialElectrical EngineeringPhotoluminescenceNanotechnologySemiconductor Device FabricationElectrochemistrySurface ScienceApplied Physics
An electrochemical technique is proposed to form a solid-state electrical contact of porous Si (PS) electroluminescence (EL) diodes. The PS layers were created by anodizing nondegenerate p-type single-crystal Si wafers in an HF solution, and then electrochemically polymerizing semitransparent conducting polypyrrole films into the PS layer. The current-voltage characteristics and the voltage and current dependence of the EL intensity were significantly improved in comparison with our experimental PS-EL diode with a thin Au film contact. Our result suggests that the electrode impregnation into PS is very useful for an efficient and stable EL operation.
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