Galvanomagnetic Properties of p‐Hg_1−<i>x</i>Cd_<i>x</i>Te

Abstract

Abstract A three‐level model for one divalent acceptor (Hg vacancy) and one monovalent acceptor (foreign atom) is suggested. The hole mobility is determined for p‐like wave functions (polar phonons and ionized impurities). Low temperature (10 to 300 K) galvanomagnetic measurements of undoped p‐Hg 1− x Cd x Te ( x ≈ 0.2) are reported. A simultaneous analysis of the hole concentration and Hall mobility data in the region 10 to 100 K and Hall coefficient and conductivity data in the region 100 to 300 K yield ionization energies of ≈ 6 meV and ≈ 0.7 E g (energy gap) for the Hg vacancy and ≈ 12 meV for the foreign acceptor. In the temperature region 100 to 300 K the mobility of electrons is determined, too.