Physical review. B, Condensed matter · 1993 · 12 citations · 16 references
Excited State PropertyPhotoluminescenceEngineeringDetailed AnalysisPhysicsApplied PhysicsQuantum MaterialsSemiconductor NanostructuresElectronic Raman-scattering ResultsElectronic Excited StateIntersubband ExcitationsOptoelectronicsIntense Raman Lines
We report a detailed analysis of both luminescence and electronic Raman-scattering results in modulation-doped single quantum wells. Wave-vector nonconservation in the electron-hole recombination process is demonstrated in these highly doped systems. We also observe, in both polarizations, surprisingly intense Raman lines in addition to the collective excitations of the electron gas. The single-particle character of these lines is proved from the analysis of their dispersion and line shape as a function of the Raman in-plane wave vector.
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B. B. Goldberg, D. Heiman, A. Pinczuk et al. · Physical Review Letters · 1990 · 206 citations
Wide-bandgap Semiconductor, Quantum Photonics, Engineering +18