Physical Review Letters · 1990 · 206 citations · 16 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsQuantum Hall PhysicsQuantum OptoelectronicsQuantum WellsSemiconductor PhysicsBand Gap EnergyElectron-hole RecombinationFermi LevelFractional Quantum Hall EffectInteger Quantum Hall EffectLocalized StatesQuantum Hall PlateausSpectral Line Splitting
Plateaus in the electron-hole recombination energy and minima in the peak intensity at integer and fractional filling factors occur in the luminescence from ultrahigh-mobility GaAs single quantum wells. At Landau and spin gaps the regions of plateaus and intensity minima broaden as the temperature is reduced, in consort with the transport Hall resistance. A sharp intensity minimum and peak shift is seen at \ensuremath{\nu}=2/3, while higher-field fractions are characterized by a splitting in the luminescence. The optical anomalies are directly related to the position of the Fermi energy in localized transport states.
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