Optical detection of the integer and fractional quantum Hall effects in GaAs

Abstract

We report a definitive optical detection, using band-gap photoluminescence, of the integer and fractional quantum Hall effects in GaAs by a comprehensive study of integer states from \ensuremath{\nu}=1 to 10 and the \ensuremath{\nu}=2/3 hierarchy out to the 5/9 daughter state, in an ultrahigh-mobility single heterojunction at 120 mK.