The Growth of High Quality GaAs on GaAs (111)A

Abstract

Whilst it is well known that the growth of GaAs on singular GaAs(111)A substrates frequently gives films with poor morphology, there is little understanding of the mechanisms involved. We have made a systematic study of the growth condition dependence of the surface morphology of such films and these results are discussed in terms of the sticking coefficient of As 4 on the growing GaAs(111)A surface and the origin of the defects is attributed to excess Ga. We have determined the conditions necessary for high quality growth.