Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

Summary of HgCdTe 2D array technology in the U.K.

Ian Baker, C. D. Maxey · Journal of Electronic Materials · 2001 · 80 citations

Engineering, Materials Engineering, Materials Science +14

Type conversion in Cd _x Hg _1-x Te by ion beam treatment

M.V. Blackman, D.E. Charlton, Matthew Jenner et al. · Electronics Letters · 1987 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +9

Type conversion of p-(HgCd)Te using and Ar reactive ion etching

E. Belas, J. Franc, A.L. Tóth et al. · Semiconductor Science and Technology · 1996 · 61 citations

Engineering, Materials Engineering, Materials Science +15

Ion beam milling effect on electrical properties of Hg1−<i>x</i>Cd<i>x</i>Te

G. Bahir, E. Finkman · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 56 citations

Natural Sciences, Materials Engineering, Materials Science +13

Role of Hg in junction formation in ion-implanted HgCdTe

L. O. Bubulac, W. E. Tennant · Applied Physics Letters · 1987 · 49 citations

Engineering, Materials Engineering, Materials Science +17