Journal of Vacuum Science and Technology · 1981 · 73 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsSurface ScienceInterface EngineeringMetal-semiconductor ContactsRaman SpectroscopySemiconductor InterfacesSemiconductor SurfacesSurface PhysicsAmorphous SiliconHydrogenated Amorphous SiliconInterface FormationInterfacial Reaction MechanismsMetal-semiconductor InterfacesNative Oxide FormationNative Oxide LayersSilicon Interfaces
The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This technique is used to study the interface structures of Pd on hydrogenated amorphous Si (a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, ∠20 Å of Pd is consumed to form a crystalline silicide interfacial structure with composition near Pd2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd2Si is observed. If the deposition is repeated on more heavily oxidized a-Si:H, no silicide formation is observed even at annealing temperatures of 400 °C.