The Journal of Physical Chemistry C · 2007 · 60 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologySemiconductor MaterialsNanostructured Electronic MaterialsNanowiresSemiconductor NanomaterialsCarrier GasesCrystalline StructureNanowire CharacterizationNanowire SynthesisPhotoluminescencePhotoluminescence SpectroscopySemiconductor Nanowires
ZnSe nanobelts and nanowires have been simultaneously synthesized by a closed-space vapor transport technique without using any carrier gas. The products are characterized by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. It is shown that the nanobelts and nanowires are 50−90 nm in thickness or diameter and hundreds of micrometers in length. Structure analysis indicates that the nanowires take the zinc blende structure, while the nanobelts are single crystalline or bicrystalline wurtzite phase. The as-synthesized products exhibit rich Raman modes and a strong near-band-edge luminescence peak centered at 476 nm. The nanobelts and nanowires grow via a vapor−solid mechanism mediated by a polycrystalline ZnSe film.
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