Physical Review Letters · 1970 · 27 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsNuclear PhysicsRadiation PhysicsDefects In Electronic MaterialsHigh-dose Radiation EffectsRadiation Damage In MaterialsRelaxation MechanismsActivation EnergyLattice DamageQuadrupole InteractionRadiation DamageRadiation Damage EffectsRadiation Damage MechanismsTemperature Dependence Of Radiation DamageVacancy Diffusion
We observe the temperature dependence of the alignment of an isomeric state in $^{73}\mathrm{As}$ (426 keV, ${\frac{9}{2}}^{+}$, $\ensuremath{\tau}=8 \ensuremath{\mu}sec$), produced by the reaction $^{72}\mathrm{Ge}(d,n)^{73}\mathrm{As}$ in solid Ge. The relaxation process can be interpreted with a diffusion-controlled time-dependent quadrupole interaction due to radiation-induced lattice damage. A diffusion energy of $E=1.3\ifmmode\pm\else\textpm\fi{}0.2$ eV is assigned to the activation energy for excess vacancy diffusion. This result yields, for the first time, quantitative insight into relaxation mechanisms associated with radiation damage in solids, which may occur when implantation techniques and nuclear reactions are employed.
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Radiation Effects in Semiconductors
J. H. Crawford · Physics Today · 1968 · 179 citations
New Method for Treating Lattice Point Defects in Covalent Crystals
K. H. Bennemann · Physical Review · 1965 · 120 citations