2007 · 34 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSensorsCmos Circuit DesignDigital Image ProcessingImage ProcessingImage SensorsLow-noise Circuit DesignSensor NoiseCmos Analog Circuit DesignCmos Image SensorsComplementary Metal-oxide-semiconductor Image SensorsComplementary Metal-oxide-semiconductor SensorsImage Sensor DesignImage Sensor TechnologyPixel ArchitectureSensor Gain
A 1/2.7 inch 1944times1092pixels CMOS image sensor with multi-gain column amplifier and double noise canceller is fabricated in a 0.18mum 1P3M CMOS process. It operates at 48MHz in a progressive scanning mode at 60fps. A 2T/pixel architecture and low optical stack with micro innerlens achieve 14.8ke <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> /1x-s sensitivity, 14ke <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> saturation, 3.7e <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> noise and 12.2e <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> dark current at 60degC.
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