AlGaAs growth using trimethyl and triethyl compound sources

Determination of the lattice constant of epitaxial layers of III-V compounds

J. Hornstra, W. Bartels · Journal of Crystal Growth · 1978 · 494 citations

Natural Sciences, Materials Science, Physics +14

Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

D.H. Reep, S. K. Ghandhi · Journal of The Electrochemical Society · 1983 · 294 citations

Engineering, Materials Engineering, Materials Science +17

A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

Maarten Leys, Hendrik Veenvliet · Journal of Crystal Growth · 1981 · 170 citations

Engineering, Electrical Engineering, Materials Science +16

Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System

Yasuo Seki, Koetsu Tanno, Kazuo Iida et al. · Journal of The Electrochemical Society · 1975 · 107 citations

Engineering, Materials Engineering, Materials Science +17

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Engineering, Materials Engineering, Materials Science +17