Self-interstitial-oxygen related defects in low-temperature irradiated Si

Radiation Effects in Semiconductors

P. J. Dean · Physics Bulletin · 1972 · 229 citations

Semiconductors, Defect Tolerance, Electrical Engineering +15

Oxygen-related thermal donors in silicon: A new structural and kinetic model

A. Ourmazd, W. Schröter, A. Bourret · Journal of Applied Physics · 1984 · 224 citations

Engineering, Chemistry, Silicon On Insulator +25

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

A. Baghdadi, W Murray Bullis, M.C. Croarkin et al. · Journal of The Electrochemical Society · 2006 · 150 citations

Ir Round Robin, Chemical Engineering, Infrared Absorption +15

Proceedings of the 25th International Conference on Defects in Semiconductors

Physica B Condensed Matter · 2009 · 137 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +7

Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon

Péter Deák, Lawrence C. Snyder, J. W. Corbett · Physical review. B, Condensed matter · 1992 · 108 citations

Engineering, Computational Chemistry, Chemistry +18