Electronic structure of Gd5(Si, Ge)4

Abstract

The electronic structure of the compounds Gd5(Si, Ge)4 has been investigated with the use of x-ray and ultraviolet photoelectron spectroscopies. The results are compared with calculations performed with the tight-binding linear muffin-tin orbital method for Gd5Si4 and Gd5Ge4. Very good agreement with the experimental data has been obtained and conclusions about the character of the electronic states, their hybridization and their influence on magnetic and electrical properties have been drawn. The effect of Ti substitution (5 at.%) for Si or Ge in Gd5(Si, Ge)4 has been investigated. Significant changes in the electronic structure near the Fermi level have been found especially for Gd5Si4.