IEEE Transactions on Magnetics · 1981 · 52 citations · 16 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesQuantum TunnelingSemiconductor PhysicsHeterodyne ReceiversHeterodyne ReceptionPhoton-assisted TunnelingQuantum Tunneling EffectsReceiver NoiseTunnel Junction NoiseTunneling Phenomena
Superconducting thin film tunnel junctions of small area ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.1 \rightarrow 1</tex> μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) have properties which make them suitable for high frequency (≳100 GHz) heterodyne receivers. Both pair and single quasiparticle tunneling is present in these devices, but it is found that the mixing due to the pair effect is apparently excessively noisy, whereas the single quasiparticle effect has a low noise character which gives hope for near quantum limited performance. The physical effect involved is photon assisted quasiparticle tunneling and was first observed by Dayem and Martin[1]. We have made laboratory tests at 115 and 230 GHz which gave single side band (SSB) mixer noise temperatures of 60 and 300 K respectively. Also we have fabricated a 90-140 GHz receiver for the Caltech Owens Valley Radio Observatory which has an overall receiver noise temperature of about 300 K (SSB).
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Quasiparticle heterodyne mixing in SIS tunnel junctions
P. L. Richards, T. M. Shen, R. Harris et al. · Applied Physics Letters · 1979 · 164 citations · Full text