Applied Physics Letters · 1997 · 70 citations · 10 references
EngineeringPiezoelectric EffectFerroelectric ApplicationNanoelectronicsSuperconductivityPiezoelectric MaterialGaas/algaas HeterostructureLateral Surface SuperlatticesMaterials ScienceElectrical EngineeringPhysicsAnisotropic Piezoelectric EffectPiezoelectricityMicroelectronicsCategoryiii-v SemiconductorSurface ScienceApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresTopological Heterostructures
We have studied the potential induced by lateral surface superlattices deposited on a GaAs/AlGaAs heterostructure as a function of bias and orientation of the gates. By using the gates to null the total potential, we extracted the contribution to this potential in the absence of gate bias. Its angular dependence shows that it is dominated by strain from the gates coupled to the electrons by the piezoelectric effect.
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