Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm

Sb-based monolithic VCSELoperating near 2.2 µm at room temperature

Y. Rouillard, G. Boissier, P. Grech et al. · Electronics Letters · 1998 · 58 citations

1.8  m vertical-cavity surface-emitting laser absorption measurements of HCl, H₂O and CH₄

Gerhard Totschnig, Maximilian Lackner, R. Shau et al. · Measurement Science and Technology · 2003 · 41 citations

Engineering, Laser Science, Laser Applications +16

Long-wavelength InP-based VCSELs with buried tunnel junction: properties and applications

R. Shau, M. Ortsiefer, Juergen Rosskopf et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2004 · 34 citations

2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

G.K. Kuang, G. Böhm, M. Grau et al. · Applied Physics Letters · 2000 · 22 citations

Photonics, Room Temperature, Engineering +13

2.36 µm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM ₀₀ output beam

L. Cerutti, A. Garnache, A. Ouvrard et al. · Electronics Letters · 2004 · 20 citations