Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm

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	Year	Citations
Sb-based monolithic VCSELoperating near 2.2 µm at room temperature Y. Rouillard, G. Boissier, P. Grech, Electronics Letters	1998	58
1.8 m vertical-cavity surface-emitting laser absorption measurements of HCl, H<sub>2</sub>O and CH<sub>4</sub> Gerhard Totschnig, Maximilian Lackner, R. Shau, Measurement Science and Technology EngineeringLaser ScienceLaser ApplicationsLaser MaterialAbsorption Spectroscopy	2003	41
Long-wavelength InP-based VCSELs with buried tunnel junction: properties and applications R. Shau, M. Ortsiefer, Juergen Rosskopf, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2004	34
2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy G.K. Kuang, G. Böhm, M. Grau, Applied Physics Letters PhotonicsRoom TemperatureEngineeringLaser ScienceSemiconductor Lasers	2000	22
2.36 µm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM <sub>00</sub> output beam L. Cerutti, A. Garnache, A. Ouvrard, Electronics Letters	2004	20

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