Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Experimental Proof of the Existence of a New Electronic Complex in Silicon

J. R. Haynes · Physical Review Letters · 1960 · 606 citations

Electrical Engineering, New Electronic Complex, Nuclear Physics +13

<i>p</i>-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

R. M. Park, M. B. Troffer, Christopher M. Rouleau et al. · Applied Physics Letters · 1990 · 600 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping

Kazuhiro Ohkawa, T. Karasawa, Tsuneo Mitsuyu · Japanese Journal of Applied Physics · 1991 · 205 citations

Materials Science, Semiconductors, Electrical Engineering +15

Compensation processes in nitrogen doped ZnSe

I. Hauksson, J.R. Simpson, S. Y. Wang et al. · Applied Physics Letters · 1992 · 189 citations

Semiconductors, Ii-vi Semiconductor, Engineering +11

Lattice location of N atoms in heavily N-doped ZnSe studied with ion beam analysis and its implication on deep level defects

T. Yao, Toshiaki Matsumoto, S. Sasaki et al. · Journal of Crystal Growth · 1994 · 62 citations

Materials Science, Ii-vi Semiconductor, Lattice Location +10