G. Horsburgh

Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z. Q. Zhu, G.D. Brownlie, G. Horsburgh et al. · Applied Physics Letters · 1995 · 30 citations

Semiconductors, Ii-vi Semiconductor, Photoluminescence +13

Microprobe Raman study of the variation of LO phonon frequency with the Cd concentration in the ternary compound Zn1 − Cd Se

W. Meredith, G. Horsburgh, G.D. Brownlie et al. · Journal of Crystal Growth · 1996 · 26 citations

Materials Science, Ii-vi Semiconductor, Engineering +8

Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

S. Y. Wang, G. Horsburgh, P. Thompson et al. · Applied Physics Letters · 1993 · 26 citations

Materials Science, Photonics, Electrical Engineering +13

Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

J. S. Massa, Gerald S. Buller, Andrew Walker et al. · Applied Physics Letters · 1995 · 22 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Spin-flip Raman-scattering studies of compensating donor centers in nitrogen-doped zinc selenide grown by molecular-beam epitaxy

C. Townsley, J. J. Davies, D. Wolverson et al. · Physical review. B, Condensed matter · 1996 · 21 citations

Nitrogen-doped Zinc Selenide, Engineering, Excitonic Transition +16