Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Optical Properties of Semiconductors

H. R. Philipp, Hannelore Ehrenreich · Physical Review · 1963 · 2.1K citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +13

Surface States and Rectification at a Metal Semi-Conductor Contact

John Bardeen · Physical Review · 1947 · 2.1K citations

Materials Science, Materials Engineering, Engineering +15

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 730 citations

Semiconductor Technology, Photonics, Electrical Engineering +12

Quantitative analysis of the inelastic background in surface electron spectroscopy

S. Tougaard · Surface and Interface Analysis · 1988 · 437 citations

Engineering, Electron Diffraction, Chemistry +18

Consistent indexing of a (set of) single crystal SAED pattern(s) with the ProcessDiffraction program

János L. Lábár · Ultramicroscopy · 2005 · 315 citations

Materials Science, Processdiffraction Program, Crystal Structure +10