Journal of Applied Physics · 2010 · 62 citations · 18 references
Materials ScienceElectrical EngineeringReversible AlternationEngineeringPerovskite Solar CellFerroelectric ApplicationThin Film ProcessingApplied PhysicsCondensed Matter PhysicsHalide PerovskitesThin FilmsMicroelectronicsLead-free PerovskitesPerovskite ModuleBroken FilamentsUnipolar Resistive SwitchingOxygen Vacancy Movement
The alternation from bipolar to unipolar resistive switching was observed in perovskite Ba0.7Sr0.3TiO3 thin films. By controlling the switching voltage, either bipolar or unipolar switching was obtained. When the switching voltage is higher than a threshold voltage, the device exhibits unipolar switching while if the switching voltage is lower than a threshold voltage, the device shows bipolar switching behavior. The bipolar-to-unipolar alternation is dynamically repeatable and may be related to the local modification of broken filaments by oxygen vacancy movement.
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Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.7K citations
Resistive switching in transition metal oxides
Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text
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Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
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