Nonvolatile SRAM Cell

Wei Wang, Aaron Gibby, Zheng Wang, Tze Wee Chen, Shinobu Fujita, Peter B. Griffin, Yoshio Nishi, S.S. Wong

2006 · 66 citations · 1 references

Concepts

Abstract

A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated

References

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