Characterization of an advanced high-efficiency electron emission device

Abstract

As previously reported, the emission characteristics of metal-insulator-semiconductor (MIS) electron emission devices could be significantly improved by introducing microdimple structures into the emission sites. In this paper, we describe the characteristics of efficient cold electron emitters from a viewpoint of application to flat panel display (FPD). First, the forming operation for the device to activate the dynamic emission is discussed on a basis of the experimental analyses of the electrical properties and output electron energy spectra. Next it is demonstrated that the device has some desirable features as an excitation source of FPD: a high emission current density, a low operation voltage, emission uniformity, and stable emission with small angle dispersion. It is also shown from the result of lifetime evaluation that the device shows a half-life of 3000 h, and that the deteriorated emission can be recovered by the dc reactivation treatment.