Journal of Applied Physics · 2006 · 13 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDefects In Electronic MaterialsDopingElectrical ConductivitySemiconductor DefectsSolar CellsThin Film Electrical PropertiesCharge Carrier DensityDoping In Thin FilmsElectrical Transport PropertiesElectroluminescenceNa ComponentOxygen VacanciesVacanciesWater Vapor Effects
The effects of water vapor introduction during growth on Cu(In,Ga)Se2 (CIGSe) thin film properties, specifically the electrical and photoluminescence (PL) properties have been studied. Increases in the hole carrier density and conductivity with water vapor introduction were observed for all [Ga]∕[In+Ga] composition ratios. The PL spectra observed from CuGaSe2 (CGSe) showed an annihilation of deep donor-acceptor pair emissions related to Se vacancies with water vapor introduction. In addition, the Na content in the CIGSe layers as well as the O content was found to increase. These results suggest that the mechanism behind the variation observed in the electrical and PL properties and consequent cell improvement is largely attributable to a decrease in the Se-vacancies-induced donor defect density and an enhancement of Na effects.
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Miguel Á. Contreras, K. Ramanathan, J. AbuShama et al. · Progress in Photovoltaics Research and Applications · 2005 · 566 citations
Radiative recombination via intrinsic defects in CuxGaySe2
A. Bauknecht, Susanne Siebentritt, J. Albert et al. · Journal of Applied Physics · 2001 · 197 citations