Ellipsometric study of boron nitride thin-film growth on Si(100)

Abstract

Variable angle spectroscopic ellipsometry over the photon energy (E) range 1.5≤E≤5.5 eV has been used to study the structure and optical properties of thin (<400 Å) laser-deposited boron nitride films grown on Si(100). The data are interpreted to indicate that initially the film grows next to the substrate in the cubic phase, followed by a reasonably sharp transition after 50–100 Å of film growth to an amorphous phase.