Low-field and high-field electron transport in zinc blende InN

Abstract

We report on the electron transport in zinc blende InN simulated by the ensemble Monte Carlo method. To obtain the relevant band structure parameters, ab initio calculations have been carried out. Then, Monte Carlo transport simulations at room temperature and over a wide range of carrier concentrations have been performed. We obtain a steady-state peak drift velocity around 3.3×107 cm/s at an electric field of 55 kV/cm. For low-doped material, a room-temperature low-field mobility of about 6000 cm2/V s is calculated. A comparison with wurtzite InN does not reveal an advantage for the zinc blende InN phase regarding the electron transport.