Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 25 citations · 0 references
Cdw Gap MeasurementsEngineeringMicroscopyChemistryElectronic StructureIi-vi SemiconductorCharge-density WaveTunneling MicroscopyNanoelectronicsQuantum MaterialsPhysicsQuantum ChemistryLayered MaterialTransition Metal ChalcogenidesNatural SciencesSpectroscopyApplied PhysicsCondensed Matter PhysicsLayer Structure
The scanning tunneling microscope has been used to measure the charge-density wave (CDW) energy gap in the layer structure compounds 1T-TaSe2, 1T-TaS2, 1T-VSe2, 1T-TiS2, 2H-TaSe2, 2H-TaS2 and 2H-NbSe2. The measured values show a systematic dependence on the strength of the CDW and calculated values of 2Δ/kBTc are compared. CDW gap measurements on the trichalcogenide compounds NbSe3 and TaS3 are also included.