Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs - Concepedia

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Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

DOI Full Paper Access

20

Citations

8

References

2009

Year

Mohammad Najmzadeh, Luca De Michielis, D. Bouvet, P. Dobrosz, Sarah H. Olsen, Adrian M. Ionescu

Microelectronic Engineering

Electrical EngineeringSilicon NanowiresEngineeringNanotechnologyApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSemiconductor Device

References

	Year	Citations

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