Electronics Letters · 1998 · 85 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsNanoelectronicsOptoelectronic DevicesQuantum DotsSemiconductor Device MaterialsSemiconductor LasersCurrent DensityHigh-power Semiconductor LasersLow-threshold Current LasersPower OutputQuantum Dot LasersQuantum Dot MaterialsQuantum Well LasersSemiconductor Quantum Dots
Lasers with a new type of quantum dot achieve low threshold current and high output power. By supplying a small amount of InAs and GaAs alternately on GaAs substrates, dots with high uniformity and high emission efficiency were self-assembled. The lasers exhibited a threshold current of 5.4 mA, a current density of 160 A/cm2, and an output power of 110 mW at room temperature.
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