Journal of Applied Physics · 1985 · 33 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSpectroscopyTransport PhenomenaCrystal ChemistryCrystal GrowthDefects In Electronic MaterialsLuminescent MaterialsOptical Properties Of SolidsChemical Vapor TransportDefect Energetics In CrystalsDefect-related LuminescenceExcitationImpurity StatesIodine TransportLuminescence MechanismsPhonons
The luminescence of single crystals of CuGaS2 grown by iodine-vapor transport was studied. As-grown crystals and crystals annealed in S, Ga, or in a vacuum were used. The crystals annealed in S showed a very intensive green luminescence, which was ascribed to donor-acceptor pair transitions interacting with lattice phonons. Studies in terms of excitation intensity, temperature, and time allow us to extract two impurity levels:ED∼50 meV and EA∼130 meV. The acceptor may be due to cation vacancies. The crystals annealed in Ga (or vacuum) showed a red luminescence which was attributed to S vacancies associated with another impurity.
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Green electroluminescence from CdS–CuGaS2 heterodiodes
S. Wagner, J. L. Shay, B. Tell et al. · Applied Physics Letters · 1973 · 81 citations
Electrical properties of CuGaS2 single crystals
Phil Won Yu, D. L. Downing, Y. S. Park · Journal of Applied Physics · 1974 · 80 citations