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Green electroluminescence from CdS–CuGaS2 heterodiodes
81
Citations
3
References
1973
Year
SemiconductorsIi-vi SemiconductorChemical EngineeringElectronic DevicesEngineeringPhotoluminescenceOptoelectronic MaterialsApplied PhysicsLight-emitting DiodesOptoelectronic DevicesVapor-deposition ExpitaxyChemistryForward BiasP-type Cugas2Luminescence PropertyOptoelectronicsCompound SemiconductorGreen Electroluminescence
Heterodiodes have been prepared by vapor-deposition expitaxy of n-type CdS on p-type CuGaS2. Typical diodes emit green light under forward bias with external quantum efficiencies of 0.1% at 77 °K and 0.001% at room temperature. The radiative recombination results from electron injection into the CuGaS2.
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