Applied Physics Letters · 1992 · 16 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLaser OpticsLaser PhysicsOptical SwitchingQuantum OptoelectronicsQuantum WellsSemiconductor LasersHeterostructure LasersHigh-temperature Device OperationQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresStrained Quantum WellsWavelength Switching
The dependence of lasing wavelength on cavity length has been systemically studied in strained-layer single, double, and triple quantum-well InGaAs lasers. Lasing from the second quantized state has been observed for the first time in double and triple quantum-well lasers. A wide range (∼500 Å) wavelength switching between the first and second quantized states has been demonstrated by controlling the injection current and/or the operation temperature.
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Spontaneous recombination current in InGaAs/GaAs quantum well lasers
P. Blood, E. D. Fletcher, K. Woodbridge et al. · Applied Physics Letters · 1990 · 42 citations