Temperature-dependence of the growth orientation of atomic layer growth MgO

Abstract

High-quality MgO thin films deposited on Si(111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C2H5)2 and H2O. The growth orientation of MgO changes from (111) to (100), when the temperature of the silicon substrate changes from 600 to 900 °C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.