0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Abstract

High-performance InAlAs/InGaAs HEMTs with a highly uniform threshold voltage are fabricated using an InP-recess-etch stopper. Recess-depth control is improved, and design of the device characteristics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps/gate is achieved with these HEMTs. © 1996 John Wiley & Sons, Inc.