Microwave and Optical Technology Letters · 1996 · 27 citations · 7 references
Electrical EngineeringEngineeringUniform Threshold VoltageScfl Ring OscillatorHigh-frequency DeviceElectronic EngineeringHigh-performance Inalas/ingaas Hemts0.1-μM Inalas/ingaas HemtsMicroelectronicsOptoelectronics
High-performance InAlAs/InGaAs HEMTs with a highly uniform threshold voltage are fabricated using an InP-recess-etch stopper. Recess-depth control is improved, and design of the device characteristics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps/gate is achieved with these HEMTs. © 1996 John Wiley & Sons, Inc.
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G. DeSalvo, Wen Feng Tseng, J. Comas · Journal of The Electrochemical Society · 1992 · 166 citations
Engineering, Electron-beam Lithography, Optoelectronic Devices +16
InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer
Shinobu Fujita, T. Noda, C. Nozaki et al. · IEEE Electron Device Letters · 1993 · 44 citations