Applied Physics Letters · 2006 · 13 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingOptical Properties Of SemiconductorsPhotodetectorsSemiconductor DetectorsSemiconductor HeterostructuresSemiconductor PhysicsBandwidth EnhancementBandwidth Enhancement TechniquesCurrent DensityDoping Effects On Device PerformanceHeterostructure DevicesHigh-speed PhotodetectionPhotodetector BandwidthPhotodiodes
In this letter, the authors introduce a GaAs∕AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to-electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3mA∕μm2 vs 0.05mA∕μm2) than previously reported for InP–InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.
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