Interband critical points of GaAs and their temperature dependence

P. Lautenschlager, M. Garriga, S. Logothetidis, +1

Physical review. B, Condensed matter

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Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

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Applied Physics Letters

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Quantum Confinement Observed in ZnO/ZnMgO Nanorod Heterostructures

Won Il Park, G.‐C. Yi, M.Y. Kim, +1

Advanced Materials

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Excitonic transitions in ZnO/MgZnO quantum well heterostructures

K. K. Bajaj

Applied Physics Letters

Categoryquantum ElectronicsCharge ExcitationsEngineeringElectronic StructureSemiconductors +15

Optical properties of excitons in ZnO-based quantum well heterostructures

T. Makino, Yasutomo Segawa, M. Kawasaki, +1

Semiconductor Science and Technology

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Generation of Uniform Colloidal Assemblies in Soft Microfluidic Devices

Gi‐Ra Yi, Todd Thorsen, Vinothan Manoharan, +5

Advanced Materials

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Carrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin films

Jianguo Lü, Shigeo Fujita, Toshiyuki Kawaharamura, +3

Applied Physics Letters

Materials ScienceSemiconductorsIi-vi SemiconductorOptical MaterialsEngineering +9

Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, Kaiyu Zhu, B. Borisov, +9

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringHigh-tc SuperconductivityEngineering +11

Recombination dynamics and lasing in ZnO∕ZnMgO single quantum well structures

T. V. Shubina, O. Lublinskaya, P. S. Kop’ev, +8

Applied Physics Letters

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Characterization of ZnO:Ga and ZnO:N films prepared by PLD

L. S. Gorbatenko, O. A. Novodvorsky, V. Ya. Panchenko, +4

Laser Physics

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