Japanese Journal of Applied Physics · 1971 · 28 citations · 11 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSolid State PhysicsElectrical ConductivityElectronic Band StructureElectronic Structure Of SolidsOptical Properties Of MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsActivation EnergyConductivityDielectric ConstantOptical PropertiesPhotoconductivityResistivityTemperature DependenceTemperature-dependent Resistivity
Absorption, photoconductivity, resistivity, and Hall coefficient of GaSe are measured. The photoconductivity spectrum reflects the exciton absortion. The crystal is p -type with two activation energies, of which value is about 0.26 eV above 200°K and 0.12 eV below 200°K for one specimen. Temperature dependence of the mobility is given by µ∝ T - n , where n is about 2. Ratio of the resistivity perpendicular to the layers to parallel one is about 10∼50. The activation energy almost equal for both orientations. Electric field dependence of the conductivity perpendicular to the layers is explained by an “anomalous” Poole-Frenkel effect. Estimated dielectric constant is ε =5.7 at 293°K and 6.6 at 102°K.
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Intensity of Optical Absorption by Excitons
R. J. Elliott · Physical Review · 1957 · 2.1K citations
Mobility of Charge Carriers in Semiconducting Layer Structures
Roland Fivaz, E. Mooser · Physical Review · 1967 · 589 citations