C. Tatsuyama - Concepedia

Author

C. Tatsuyama

University of Toyama

Also Known As

C TATSUYAMA, C Tatsuyama, C. Tatsuyama, C.C. Tatsuyama, Chiei TATSUYAMA, Chiei Tatsuyama

129

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

University of Toyama

About

C. Tatsuyama is an author at University of Toyama specializing in applied physics, engineering, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	49	1.4K
2	Applied Physics	21	48	1.4K
3	Chemistry	10	11	457
4	Natural Sciences	9	9	364
5	Chemical Engineering	2	2	65

C. Tatsuyama

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Heteroepitaxial growth of Ge films on the Si(100)-2×1 surface M. Asai, H. Ueba, C. Tatsuyama Journal of Applied Physics SemiconductorsMaterials ScienceInitial StageEpitaxial GrowthEngineering	1985	155
XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe Hiroaki Iwakuro, C. Tatsuyama, Shoji Ichimura Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringPrimitive LayerOxidation Resistance	1982	126
On the Electrochromism of Evaporated V<sub>2</sub>O<sub>5</sub> Films Yoshitaka Fujita, Katsuhiro Miyazaki, C. Tatsuyama Japanese Journal of Applied Physics EngineeringOptical AbsorptionThin Film Process TechnologyChemistryElectrochemical Interface	1985	115
Electrical and Optical Properties of GaSe-SnO<sub>2</sub>Heterojunctions C. Tatsuyama, Shoji Ichimura Japanese Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductors	1976	101
Some Optical Properties of Layer-Type Semiconductor GaTe C. Tatsuyama, Yasuharu WATANABE, Chihiro Hamaguchi, Journal of the Physical Society of Japan Optical MaterialsEngineeringExcitation Energy TransferOptoelectronic DevicesChemistry	1970	63
Structural properties of heteroepitaxial Ge films on a Si(100)-2×1 surface Y. Kataoka, H. Ueba, C. Tatsuyama Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringEpitaxial GrowthEngineering	1988	55
XPS Study on the Oxidation of InSe Izumi Miyake, Toyokazu Tanpo, C. Tatsuyama Japanese Journal of Applied Physics EngineeringOxidation ResistanceOptoelectronic DevicesChemistrySemiconductors	1984	48
LEED/AES Studies of the Ge on Si(111)7×7 Surface Katsuyuki Shoji, Masahito Hyodo, H. Ueba, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceSurface CharacterizationEngineeringLeed/aes Studies	1983	43
Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces Katsuyuki Shoji, Masahito Hyodo, H. Ueba, Japanese Journal of Applied Physics Materials ScienceOxide HeterostructuresSemiconductorsInitial StageEngineering	1983	38
Structural characterization of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy T. Obata, Kosuke Komeda, T. Nakao, Journal of Applied Physics Materials ScienceMaterials EngineeringStructural CharacterizationEpitaxial GrowthEngineering	1997	29

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