First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Abstract

AlGaN/GaN HEMTs are realized on a sapphire substrate without a field plate for power applications at microwave frequencies using a new Ar+ ions implant-isolation technology. The first results obtained are very good in terms of device isolation. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 311–315, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20974