Defect‐impurity interactions in irradiated tin‐doped Cz‐Si crystals

Abstract

Results of a combined infrared absorption (IR) and deep-level transient spectroscopy (DLTS) study of defects induced by irradiation with fast electrons in Sn-doped Czochralski-grown Si crystals are reported. Tin atoms were found to interact effectively with vacancy as well as with interstitial-type radiation-induced defects. Manifestations of stable tin-vacancy and tin-interstitial carbon atom complexes were observed in DLTS and IR absorption spectra. Defect transformations upon heat-treatments of the irradiated samples were studied. Tin atoms were found to be effective traps for mobile vacancy–oxygen (V–O) complexes. A local vibrational mode of a Sn–V–O complex has been identified.