High Thermal Responsiveness of a Reduced Graphene Oxide Field‐Effect Transistor

Abstract

A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.