Performance comparison of O-based and Cu-based ReRAM for high-density applications

Abstract

The resistive switching memory (ReRAM) landscape encompasses several cell technology options. Filamentary systems that employ oxygen ion motion (O-ReRAM) or metal ion motion (M-ReRAM) and systems that employ uniform oxygen ion motion are being widely studied as potential candidates for next generation of non-volatile memory systems (NVM). While comparisons between different systems have been made at single-cell level, enabling a future NVM technology mandates an evaluation of a statistically significant population of bits. This paper presents an array-level comparison of two filamentary systems: O-ReRAM and Cu ion based M-ReRAM. The key factors for enabling a manufacturable product are compared, such as read window, noise, variability, endurance and retention.