Energy deposition and transfer in electron-beam lithography

Abstract

An analytical electron-resist interaction (ERI) model is developed based on detailed investigation of secondary electron production and binding energy related exposure events. Analysis shows that 80% of the exposure events are directly caused by secondary electrons for 100 keV primary electron energy. The number of secondary electrons and further cascade electrons is 1/20 and 1/300, respectively, of the incoming electrons. An algebraic expression is derived to describe the spatial distribution of the exposure events. The ERI model can be extended to chemically amplified resists.