Characterization of damage in ion implanted Ge

Abstract

It has been observed that ion implantation into Ge at room temperature creates severe surface craters extending several thousand angstroms into the surface, and results in the incorporation of large quantities of C and O impurities (∼50 impurities/ion). This effect has a strong temperature dependence and essentially disappears for implantations performed at liquid nitrogen temperature. The systematics of this effect are presented, preliminary annealing results are cited, and possible mechanisms are discussed.