Applied Physics Letters · 1982 · 122 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceDopingIon ImplantationIonization ProcessesPlasma Surface TreatmentRadiation Damage In MaterialsAnnealingImplantation-induced Defect FormationImpuritiesIon Implantation EffectsRadiation Damage MechanismsRadiation-induced Surface EffectsSurface Modification By Ion ImplantationTemperature Dependence
It has been observed that ion implantation into Ge at room temperature creates severe surface craters extending several thousand angstroms into the surface, and results in the incorporation of large quantities of C and O impurities (∼50 impurities/ion). This effect has a strong temperature dependence and essentially disappears for implantations performed at liquid nitrogen temperature. The systematics of this effect are presented, preliminary annealing results are cited, and possible mechanisms are discussed.
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Voids in irradiated metals (Part I)
D. I. R. Norris · Radiation Effects · 1972 · 222 citations