Applied Physics Letters · 1977 · 52 citations · 6 references
Wide-bandgap SemiconductorOptical MaterialsEngineeringHigh-performance Backside-illuminated PhotodiodesOptoelectronic DevicesSemiconductorsElectronic DevicesPhotodetectorsOptical PropertiesPeak WavelengthMolecular Beam EpitaxyCompound SemiconductorPhotonicsElectrical EngineeringPhotoluminescenceOptoelectronic MaterialsPhotoelectric MeasurementInas1−xsbx-inas HeterostructuresApplied PhysicsOptoelectronics
High-performance backside-illuminated photodiodes have been fabricated for the first time from InAs1−xSbx-InAs heterostructures prepared by liquid-phase-epitaxy technique. The peak wavelength can be tuned compositionally from 3.1 to over 7.0 μm at 77 K. The half-width of the spectral responses as narrow as 1760 Å (at 4.0 μm) have been achieved. Internal quantum efficiencies of 90% and zero-bias-resistance–area products of 2×107 Ω cm2 have been obtained at 77 K.
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