Backside-illuminated InAs1−<i>x</i>Sb<i>x</i>-InAs narrow-band photodetectors

Abstract

High-performance backside-illuminated photodiodes have been fabricated for the first time from InAs1−xSbx-InAs heterostructures prepared by liquid-phase-epitaxy technique. The peak wavelength can be tuned compositionally from 3.1 to over 7.0 μm at 77 K. The half-width of the spectral responses as narrow as 1760 Å (at 4.0 μm) have been achieved. Internal quantum efficiencies of 90% and zero-bias-resistance–area products of 2×107 Ω cm2 have been obtained at 77 K.