Electronic transport studies of a systematic series of GaAs∕AlGaAs quantum wells

Abstract

The results of experimental transport studies involving a series of five narrow Al0.1Ga0.9As∕GaAs quantum wells with well widths ranging from 7.9to33.0nm are reported. The total transport scattering rate measured in thin AlGaAs∕GaAs quantum wells is typically limited by electron scattering from the interfacial roughness of the quantum well. For a relatively low constant electron density (ne∼5.8×1010cm−2)⁠, the authors find that interfacial roughness is the dominant scattering mechanism for L⩽16.0nm and describe the data using a finite quantum well model with adjustable interfacial roughness parameters. Temperature dependence data are also presented.